Fowler-Nordheim tunneling characterization on poly1-poly2 capacitors for the implementation of analog memories in CMOS 0.5 [micro]m technology

Fowler-Nordheim tunneling characterization on poly1-poly2 capacitors for the implementation of analog memories in CMOS 0.5 [micro]m technology

The experimental results of the Fowler-Nordheim characterization using poly1-poly2 capacitors on CMOS ON Semi 0.5 pm technology are presented. This characterization allows the development, design, and characterization of a new current-mode analog nonvolatile memory. Experimental results of the memor...

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Veröffentlicht in:Advances in Condensed Matter Physics 2014-01, Vol.2014
Hauptverfasser: Tinajero-Perez, Enrique J, Molinar-Solis, Jesus Ezequiel, Garcia-Lozano, Rodolfo Z, Rosales-Quintero, Pedro, Rocha-Perez, Jose M, Diaz-Sanchez, Alejandro, Morales-Acevedo, Arturo
Format: Artikel
Sprache:eng
Schlagworte:
Analysis
Capacitors
Complementary metal oxide semiconductors
Electric currents
Field programmable gate arrays
Information storage
Memory (Computers)
Neural networks
Technology application
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Zusammenfassung:The experimental results of the Fowler-Nordheim characterization using poly1-poly2 capacitors on CMOS ON Semi 0.5 pm technology are presented. This characterization allows the development, design, and characterization of a new current-mode analog nonvolatile memory. Experimental results of the memory cell architecture are presented and demonstrate the usefulness of the proposed architecture.
ISSN:1687-8108
1687-8124
DOI:10.1155/2014/632785