Improved Cu2O-Based Solar Cells Using Atomic Layer Deposition to Control the Cu Oxidation State at the p-n Junction
Solar cells are produced by atomic layer deposition (ALD) of n‐type amorphous zinc‐tin‐oxide buffer layers on electrochemically deposited p‐type cuprous oxide, Cu2O, absorber layers. The diethylzinc precursor in the ALD process reduces Cu2+‐related defects at the heterojunction interface, improving...
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| Veröffentlicht in: | Advanced energy materials 2014-08, Vol.4 (11), p.n/a |
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| container_title | Advanced energy materials |
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| creator | Lee, Sang Woon Lee, Yun Seog Heo, Jaeyeong Siah, Sin Cheng Chua, Danny Brandt, Riley E. Kim, Sang Bok Mailoa, Jonathan P. Buonassisi, Tonio Gordon, Roy G. |
| description | Solar cells are produced by atomic layer deposition (ALD) of n‐type amorphous zinc‐tin‐oxide buffer layers on electrochemically deposited p‐type cuprous oxide, Cu2O, absorber layers. The diethylzinc precursor in the ALD process reduces Cu2+‐related defects at the heterojunction interface, improving the solar‐cell open‐circuit voltage. An NREL‐certified power conversion efficiency of 2.85% is reported. |
| doi_str_mv | 10.1002/aenm.201301916 |
| format | Article |
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| subjects | interface recombination photovoltaic devices solar cells surface modification thin films |
| title | Improved Cu2O-Based Solar Cells Using Atomic Layer Deposition to Control the Cu Oxidation State at the p-n Junction |
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