Improved Cu2O-Based Solar Cells Using Atomic Layer Deposition to Control the Cu Oxidation State at the p-n Junction

Improved Cu2O-Based Solar Cells Using Atomic Layer Deposition to Control the Cu Oxidation State at the p-n Junction

Solar cells are produced by atomic layer deposition (ALD) of n‐type amorphous zinc‐tin‐oxide buffer layers on electrochemically deposited p‐type cuprous oxide, Cu2O, absorber layers. The diethylzinc precursor in the ALD process reduces Cu2+‐related defects at the heterojunction interface, improving...

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Veröffentlicht in:Advanced energy materials 2014-08, Vol.4 (11), p.n/a
Hauptverfasser: Lee, Sang Woon, Lee, Yun Seog, Heo, Jaeyeong, Siah, Sin Cheng, Chua, Danny, Brandt, Riley E., Kim, Sang Bok, Mailoa, Jonathan P., Buonassisi, Tonio, Gordon, Roy G.
Format: Artikel
Sprache:eng
Schlagworte:
interface recombination
photovoltaic devices
solar cells
surface modification
thin films
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Zusammenfassung:Solar cells are produced by atomic layer deposition (ALD) of n‐type amorphous zinc‐tin‐oxide buffer layers on electrochemically deposited p‐type cuprous oxide, Cu2O, absorber layers. The diethylzinc precursor in the ALD process reduces Cu2+‐related defects at the heterojunction interface, improving the solar‐cell open‐circuit voltage. An NREL‐certified power conversion efficiency of 2.85% is reported.
ISSN:1614-6832
1614-6840
DOI:10.1002/aenm.201301916