Design of Step-Down Broadband and Low-Loss Ruthroff-Type Baluns Using IPD Technology
Ruthroff-type transmission line transformers (TLTs) and baluns prevail over their broadband and low-loss performance. A typical Ruthroff-type balun with a 1:4 step-up impedance transformation ratio was successfully presented using integrated passive devices (IPDs) process. Moreover, two proposed bal...
Gespeichert in:
Veröffentlicht in: | IEEE transactions on components, packaging, and manufacturing technology (2011) packaging, and manufacturing technology (2011), 2014-06, Vol.4 (6), p.967-974 |
---|---|
Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Ruthroff-type transmission line transformers (TLTs) and baluns prevail over their broadband and low-loss performance. A typical Ruthroff-type balun with a 1:4 step-up impedance transformation ratio was successfully presented using integrated passive devices (IPDs) process. Moreover, two proposed baluns with step-down impedance transformation ratios of 1:1 and 9:4 were developed by modifying the combination of one Ruthroff-type TLT and one Ruthroff-type balun. The two proposed impedance step-down baluns whose balanced impedance is lower than unbalanced impedance make Ruthroff-type balun more flexible for applications; meanwhile, fabricating the baluns using IPD process can help to enhance the low-loss performance. The measured results show that the proposed 1:1 balun exhibits an insertion loss of 0.46 dB with 1-dB fractional bandwidth of 138.9%, and the proposed 9:4 balun exhibits an insertion loss of 0.75 dB with 1-dB fractional bandwidth of 72.4%. The chip areas of the proposed 1:1 and 9:4 baluns, including the pads, are 0.6 and 0.64 mm 2 , respectively. The two proposed baluns are the first on-chip step-down Ruthroff-type baluns and having an option of center tap, which is highly contributive to wideband and high-efficiency power amplifier design. |
---|---|
ISSN: | 2156-3950 2156-3985 |
DOI: | 10.1109/TCPMT.2014.2311662 |