Barrier Height at the Graphene and Carbon Nanotube Junction

Graphene/carbon nanotube (CNT) junction barrier height was investigated using all-carbon field-effect transistor structure with graphene and single-walled CNT (SWCNT) network as source (S)/drain (D)/gate electrodes and as channel, respectively. SWCNT network channel was formed by dielectricphoresis...

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Veröffentlicht in:	IEEE transactions on electron devices 2014-06, Vol.61 (6), p.2203-2207
Hauptverfasser:	Kim, Tae Geun, Kim, Un Jeong, Lee, Si Young, Lee, Young Hee, Yu, Yun Seop, Hwang, Sung Woo, Kim, Sangsig
Format:	Artikel
Sprache:	eng
Schlagworte:	Barrier height Barriers carbon nanotube (CNT) Carbon nanotubes Channels Drains Electrodes FET Graphene Integrated circuit modeling Junctions Logic gates Networks Single wall carbon nanotubes SPICE Transistors
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