Barrier Height at the Graphene and Carbon Nanotube Junction

Barrier Height at the Graphene and Carbon Nanotube Junction

Graphene/carbon nanotube (CNT) junction barrier height was investigated using all-carbon field-effect transistor structure with graphene and single-walled CNT (SWCNT) network as source (S)/drain (D)/gate electrodes and as channel, respectively. SWCNT network channel was formed by dielectricphoresis...

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Veröffentlicht in:IEEE transactions on electron devices 2014-06, Vol.61 (6), p.2203-2207
Hauptverfasser: Kim, Tae Geun, Kim, Un Jeong, Lee, Si Young, Lee, Young Hee, Yu, Yun Seop, Hwang, Sung Woo, Kim, Sangsig
Format: Artikel
Sprache:eng
Schlagworte:
Barrier height
Barriers
carbon nanotube (CNT)
Carbon nanotubes
Channels
Drains
Electrodes
FET
Graphene
Integrated circuit modeling
Junctions
Logic gates
Networks
Single wall carbon nanotubes
SPICE
Transistors
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Beschreibung
Zusammenfassung:Graphene/carbon nanotube (CNT) junction barrier height was investigated using all-carbon field-effect transistor structure with graphene and single-walled CNT (SWCNT) network as source (S)/drain (D)/gate electrodes and as channel, respectively. SWCNT network channel was formed by dielectricphoresis process at the prepatterned graphene S/D electrodes. By analyzing the measured current-voltage characteristics by the diode circuit model, the Schottky barrier height at the graphene and CNT junction was found to be approximately 0.5 eV.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2014.2317799