Barrier Height at the Graphene and Carbon Nanotube Junction
Graphene/carbon nanotube (CNT) junction barrier height was investigated using all-carbon field-effect transistor structure with graphene and single-walled CNT (SWCNT) network as source (S)/drain (D)/gate electrodes and as channel, respectively. SWCNT network channel was formed by dielectricphoresis...
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| Veröffentlicht in: | IEEE transactions on electron devices 2014-06, Vol.61 (6), p.2203-2207 |
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| container_end_page | 2207 |
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| container_title | IEEE transactions on electron devices |
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| creator | Kim, Tae Geun Kim, Un Jeong Lee, Si Young Lee, Young Hee Yu, Yun Seop Hwang, Sung Woo Kim, Sangsig |
| description | Graphene/carbon nanotube (CNT) junction barrier height was investigated using all-carbon field-effect transistor structure with graphene and single-walled CNT (SWCNT) network as source (S)/drain (D)/gate electrodes and as channel, respectively. SWCNT network channel was formed by dielectricphoresis process at the prepatterned graphene S/D electrodes. By analyzing the measured current-voltage characteristics by the diode circuit model, the Schottky barrier height at the graphene and CNT junction was found to be approximately 0.5 eV. |
| doi_str_mv | 10.1109/TED.2014.2317799 |
| format | Article |
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SWCNT network channel was formed by dielectricphoresis process at the prepatterned graphene S/D electrodes. By analyzing the measured current-voltage characteristics by the diode circuit model, the Schottky barrier height at the graphene and CNT junction was found to be approximately 0.5 eV.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2014.2317799</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Barrier height ; Barriers ; carbon nanotube (CNT) ; Carbon nanotubes ; Channels ; Drains ; Electrodes ; FET ; Graphene ; Integrated circuit modeling ; Junctions ; Logic gates ; Networks ; Single wall carbon nanotubes ; SPICE ; Transistors</subject><ispartof>IEEE transactions on electron devices, 2014-06, Vol.61 (6), p.2203-2207</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Jun 2014</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c324t-718a0103f22157023cc4494114d552e32e7e6e952a388ec1f500e5871cf115a43</citedby><cites>FETCH-LOGICAL-c324t-718a0103f22157023cc4494114d552e32e7e6e952a388ec1f500e5871cf115a43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6810140$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6810140$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Kim, Tae Geun</creatorcontrib><creatorcontrib>Kim, Un Jeong</creatorcontrib><creatorcontrib>Lee, Si Young</creatorcontrib><creatorcontrib>Lee, Young Hee</creatorcontrib><creatorcontrib>Yu, Yun Seop</creatorcontrib><creatorcontrib>Hwang, Sung Woo</creatorcontrib><creatorcontrib>Kim, Sangsig</creatorcontrib><title>Barrier Height at the Graphene and Carbon Nanotube Junction</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>Graphene/carbon nanotube (CNT) junction barrier height was investigated using all-carbon field-effect transistor structure with graphene and single-walled CNT (SWCNT) network as source (S)/drain (D)/gate electrodes and as channel, respectively. SWCNT network channel was formed by dielectricphoresis process at the prepatterned graphene S/D electrodes. By analyzing the measured current-voltage characteristics by the diode circuit model, the Schottky barrier height at the graphene and CNT junction was found to be approximately 0.5 eV.</description><subject>Barrier height</subject><subject>Barriers</subject><subject>carbon nanotube (CNT)</subject><subject>Carbon nanotubes</subject><subject>Channels</subject><subject>Drains</subject><subject>Electrodes</subject><subject>FET</subject><subject>Graphene</subject><subject>Integrated circuit modeling</subject><subject>Junctions</subject><subject>Logic gates</subject><subject>Networks</subject><subject>Single wall carbon nanotubes</subject><subject>SPICE</subject><subject>Transistors</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkE1LAzEURYMoWKt7wU3AjZupefmYJLjSqq1SdFPXIU3f2CltpmZmFv57UyouXD0unHt5HEIugY0AmL2dPz2OOAM54gK0tvaIDEApXdhSlsdkwBiYwgojTslZ265zLKXkA3L34FOqMdEp1p-rjvqOdiukk-R3K4xIfVzSsU-LJtI3H5uuXyB97WPo6iaek5PKb1q8-L1D8vH8NB9Pi9n75GV8PyuC4LIrNBjPgImKc1CacRGClFYCyKVSHAVHjSVaxb0wBgNUijFURkOoAJSXYkhuDru71Hz12HZuW7cBNxsfselbB2VpjVWMs4xe_0PXTZ9i_s6BkspqnnczxQ5USE3bJqzcLtVbn74dMLe36bJNt7fpfm3mytWhUiPiH14ayBATP1wXbKc</recordid><startdate>20140601</startdate><enddate>20140601</enddate><creator>Kim, Tae Geun</creator><creator>Kim, Un Jeong</creator><creator>Lee, Si Young</creator><creator>Lee, Young Hee</creator><creator>Yu, Yun Seop</creator><creator>Hwang, Sung Woo</creator><creator>Kim, Sangsig</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7U5</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20140601</creationdate><title>Barrier Height at the Graphene and Carbon Nanotube Junction</title><author>Kim, Tae Geun ; Kim, Un Jeong ; Lee, Si Young ; Lee, Young Hee ; Yu, Yun Seop ; Hwang, Sung Woo ; Kim, Sangsig</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c324t-718a0103f22157023cc4494114d552e32e7e6e952a388ec1f500e5871cf115a43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Barrier height</topic><topic>Barriers</topic><topic>carbon nanotube (CNT)</topic><topic>Carbon nanotubes</topic><topic>Channels</topic><topic>Drains</topic><topic>Electrodes</topic><topic>FET</topic><topic>Graphene</topic><topic>Integrated circuit modeling</topic><topic>Junctions</topic><topic>Logic gates</topic><topic>Networks</topic><topic>Single wall carbon nanotubes</topic><topic>SPICE</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Tae Geun</creatorcontrib><creatorcontrib>Kim, Un Jeong</creatorcontrib><creatorcontrib>Lee, Si Young</creatorcontrib><creatorcontrib>Lee, Young Hee</creatorcontrib><creatorcontrib>Yu, Yun Seop</creatorcontrib><creatorcontrib>Hwang, Sung Woo</creatorcontrib><creatorcontrib>Kim, Sangsig</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kim, Tae Geun</au><au>Kim, Un Jeong</au><au>Lee, Si Young</au><au>Lee, Young Hee</au><au>Yu, Yun Seop</au><au>Hwang, Sung Woo</au><au>Kim, Sangsig</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Barrier Height at the Graphene and Carbon Nanotube Junction</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2014-06-01</date><risdate>2014</risdate><volume>61</volume><issue>6</issue><spage>2203</spage><epage>2207</epage><pages>2203-2207</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>Graphene/carbon nanotube (CNT) junction barrier height was investigated using all-carbon field-effect transistor structure with graphene and single-walled CNT (SWCNT) network as source (S)/drain (D)/gate electrodes and as channel, respectively. SWCNT network channel was formed by dielectricphoresis process at the prepatterned graphene S/D electrodes. By analyzing the measured current-voltage characteristics by the diode circuit model, the Schottky barrier height at the graphene and CNT junction was found to be approximately 0.5 eV.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2014.2317799</doi><tpages>5</tpages></addata></record> |
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| subjects | Barrier height Barriers carbon nanotube (CNT) Carbon nanotubes Channels Drains Electrodes FET Graphene Integrated circuit modeling Junctions Logic gates Networks Single wall carbon nanotubes SPICE Transistors |
| title | Barrier Height at the Graphene and Carbon Nanotube Junction |
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