Evaluation and Solutions for P/E Window Instability Induced by Electron Trapping in High- \kappa Intergate Dielectrics of Flash Memory Cells

High density of electron trapping in high-κ intergate dielectric (IGD) materials remains a major concern for planar memory cells with either poly-Si or hybrid floating gates (FGs). In this paper, for the first time, using the ultrafast I-V measurements, it is demonstrated that a significant portion...

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