Spin and Charge Transport in the X-ray Irradiated Quasi-2D Layered Compound: [kappa]-(BEDT-TTF)2Cu[N(CN)2]Cl

The interplane spin cross relaxation time Tx measured by high frequency ESR in X-ray irradiated κ-(BEDT-TTF)2Cu[N(CN)2]Cl is compared to the interplane resisitivity ρ[perpendicular]and the in-plane resistivity ρII between 50 K and 250 K. The irradiation transforms the semiconductor behavior of the non-irradiated crystal into metallic. Irradiation decreases Tx, ρ[perpendicular] and ρII but the ratio Tx/ρ[perpendicular] and ρ[perpendicular]/ρII remain unchanged between 50 and 250 K. Models describing the unusual defect concentration dependence in κ-(BEDT-TTF)2Cu[N(CN)2]Cl are discussed.