The Effect of Growth Pressure and Growth Rate on the Properties of Mg-Doped GaN

In this work, the effects of growth pressure and growth rate on electrical and structural properties of Mg-doped GaN were investigated. It has been shown that enhanced growth rates induced by higher growth pressures may lead to decreased structural and electrical properties of p -type GaN layers. If...

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Veröffentlicht in:	Journal of electronic materials 2014-04, Vol.43 (4), p.1244-1248
Hauptverfasser:	Fu, Binglei, Liu, Naixin, Zhang, Ning, Si, Zhao, Wei, Xuecheng, Wang, Xiaodong, Lu, Hongxi, Liu, Zhe, Wei, Tongbo, Yi, Xiaoyan, Li, Jinmin, Wang, Junxi
Format:	Artikel
Sprache:	eng
Schlagworte:	Characterization and Evaluation of Materials Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Chemistry and Materials Science Cross-disciplinary physics: materials science rheology Electric properties Electronics and Microelectronics Exact sciences and technology Instrumentation Light emitting diodes Materials Science Methods of crystal growth physics of crystal growth Methods of deposition of films and coatings film growth and epitaxy Optical and Electronic Materials Physics Solid State Physics Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation
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Zusammenfassung:	In this work, the effects of growth pressure and growth rate on electrical and structural properties of Mg-doped GaN were investigated. It has been shown that enhanced growth rates induced by higher growth pressures may lead to decreased structural and electrical properties of p -type GaN layers. If the growth rate is kept unchanged, higher growth pressures will be beneficial for the quality of Mg-doped GaN due to the enhanced NH 3 overpressure.
ISSN:	0361-5235 1543-186X
DOI:	10.1007/s11664-014-3005-9