0.2-[Formula Omitted] InP/GaAsSb DHBT Power Performance With 10 [Formula Omitted] and 25% PAE at 94 GHz

0.2-[Formula Omitted] InP/GaAsSb DHBT Power Performance With 10 [Formula Omitted] and 25% PAE at 94 GHz

We report a 94-GHz large-signal load-pull characterization of InP/GaAsSb double heterojunction bipolar transistors. The investigated devices have an emitter area of [Formula Omitted]. Biased for highest power added efficiency (PAE), an output power of 6.62 [Formula Omitted] (11 dBm), a power gain of...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE electron device letters 2014-03, Vol.35 (3), p.321
Hauptverfasser: Zaknoune, Mohammed, Okada, Etienne, Mairiaux, Estelle, Roelens, Yannick, Ducatteau, Damien, Frijlink, Peter, Rocchi, Marc, Maher, Hassan
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 3
container_start_page 321
container_title IEEE electron device letters
container_volume 35
creator Zaknoune, Mohammed
Okada, Etienne
Mairiaux, Estelle
Roelens, Yannick
Ducatteau, Damien
Frijlink, Peter
Rocchi, Marc
Maher, Hassan
description We report a 94-GHz large-signal load-pull characterization of InP/GaAsSb double heterojunction bipolar transistors. The investigated devices have an emitter area of [Formula Omitted]. Biased for highest power added efficiency (PAE), an output power of 6.62 [Formula Omitted] (11 dBm), a power gain of 5.2 dB, and a PAE of 27.7% have been obtained. Biased for highest output power, 10.26 [Formula Omitted] (12.8 dBm) has been achieved without significant degradation of the PAE (25.2%) and the power gain (4.5 dB). [PUBLICATION ABSTRACT]
doi_str_mv 10.1109/LED.2014.2298251
format Article
fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_journals_1506268746</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3243090161</sourcerecordid><originalsourceid>FETCH-proquest_journals_15062687463</originalsourceid><addsrcrecordid>eNqNyzFrwkAYxvGjKDRq944vlI6J73u5uySj1WgEwYCCgxS51rNVNGnvLhT66Zuhm4vTM_x_D2OPhBERZsNFPok4kog4z1Iu6Y4FJGUaolRxhwWYCApjQnXPes6dsJUiEQH7wIiH22ltL81Zw_Jy9N7sX2FelcOZHrnVG0yKlzWU9Y-xUBp7aKWu3g1sjv4TCOH6q6s9cPkM5SgH7SETMCt-B6x70GdnHv63z56m-XpchF-2_m6M87tT3diqTTuSqLhKE6Hi29QfVa1IsQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1506268746</pqid></control><display><type>article</type><title>0.2-[Formula Omitted] InP/GaAsSb DHBT Power Performance With 10 [Formula Omitted] and 25% PAE at 94 GHz</title><source>IEEE Electronic Library (IEL)</source><creator>Zaknoune, Mohammed ; Okada, Etienne ; Mairiaux, Estelle ; Roelens, Yannick ; Ducatteau, Damien ; Frijlink, Peter ; Rocchi, Marc ; Maher, Hassan</creator><creatorcontrib>Zaknoune, Mohammed ; Okada, Etienne ; Mairiaux, Estelle ; Roelens, Yannick ; Ducatteau, Damien ; Frijlink, Peter ; Rocchi, Marc ; Maher, Hassan</creatorcontrib><description>We report a 94-GHz large-signal load-pull characterization of InP/GaAsSb double heterojunction bipolar transistors. The investigated devices have an emitter area of [Formula Omitted]. Biased for highest power added efficiency (PAE), an output power of 6.62 [Formula Omitted] (11 dBm), a power gain of 5.2 dB, and a PAE of 27.7% have been obtained. Biased for highest output power, 10.26 [Formula Omitted] (12.8 dBm) has been achieved without significant degradation of the PAE (25.2%) and the power gain (4.5 dB). [PUBLICATION ABSTRACT]</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2014.2298251</identifier><language>eng</language><publisher>New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</publisher><ispartof>IEEE electron device letters, 2014-03, Vol.35 (3), p.321</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Mar 2014</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Zaknoune, Mohammed</creatorcontrib><creatorcontrib>Okada, Etienne</creatorcontrib><creatorcontrib>Mairiaux, Estelle</creatorcontrib><creatorcontrib>Roelens, Yannick</creatorcontrib><creatorcontrib>Ducatteau, Damien</creatorcontrib><creatorcontrib>Frijlink, Peter</creatorcontrib><creatorcontrib>Rocchi, Marc</creatorcontrib><creatorcontrib>Maher, Hassan</creatorcontrib><title>0.2-[Formula Omitted] InP/GaAsSb DHBT Power Performance With 10 [Formula Omitted] and 25% PAE at 94 GHz</title><title>IEEE electron device letters</title><description>We report a 94-GHz large-signal load-pull characterization of InP/GaAsSb double heterojunction bipolar transistors. The investigated devices have an emitter area of [Formula Omitted]. Biased for highest power added efficiency (PAE), an output power of 6.62 [Formula Omitted] (11 dBm), a power gain of 5.2 dB, and a PAE of 27.7% have been obtained. Biased for highest output power, 10.26 [Formula Omitted] (12.8 dBm) has been achieved without significant degradation of the PAE (25.2%) and the power gain (4.5 dB). [PUBLICATION ABSTRACT]</description><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNqNyzFrwkAYxvGjKDRq944vlI6J73u5uySj1WgEwYCCgxS51rNVNGnvLhT66Zuhm4vTM_x_D2OPhBERZsNFPok4kog4z1Iu6Y4FJGUaolRxhwWYCApjQnXPes6dsJUiEQH7wIiH22ltL81Zw_Jy9N7sX2FelcOZHrnVG0yKlzWU9Y-xUBp7aKWu3g1sjv4TCOH6q6s9cPkM5SgH7SETMCt-B6x70GdnHv63z56m-XpchF-2_m6M87tT3diqTTuSqLhKE6Hi29QfVa1IsQ</recordid><startdate>20140301</startdate><enddate>20140301</enddate><creator>Zaknoune, Mohammed</creator><creator>Okada, Etienne</creator><creator>Mairiaux, Estelle</creator><creator>Roelens, Yannick</creator><creator>Ducatteau, Damien</creator><creator>Frijlink, Peter</creator><creator>Rocchi, Marc</creator><creator>Maher, Hassan</creator><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20140301</creationdate><title>0.2-[Formula Omitted] InP/GaAsSb DHBT Power Performance With 10 [Formula Omitted] and 25% PAE at 94 GHz</title><author>Zaknoune, Mohammed ; Okada, Etienne ; Mairiaux, Estelle ; Roelens, Yannick ; Ducatteau, Damien ; Frijlink, Peter ; Rocchi, Marc ; Maher, Hassan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_journals_15062687463</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zaknoune, Mohammed</creatorcontrib><creatorcontrib>Okada, Etienne</creatorcontrib><creatorcontrib>Mairiaux, Estelle</creatorcontrib><creatorcontrib>Roelens, Yannick</creatorcontrib><creatorcontrib>Ducatteau, Damien</creatorcontrib><creatorcontrib>Frijlink, Peter</creatorcontrib><creatorcontrib>Rocchi, Marc</creatorcontrib><creatorcontrib>Maher, Hassan</creatorcontrib><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zaknoune, Mohammed</au><au>Okada, Etienne</au><au>Mairiaux, Estelle</au><au>Roelens, Yannick</au><au>Ducatteau, Damien</au><au>Frijlink, Peter</au><au>Rocchi, Marc</au><au>Maher, Hassan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>0.2-[Formula Omitted] InP/GaAsSb DHBT Power Performance With 10 [Formula Omitted] and 25% PAE at 94 GHz</atitle><jtitle>IEEE electron device letters</jtitle><date>2014-03-01</date><risdate>2014</risdate><volume>35</volume><issue>3</issue><spage>321</spage><pages>321-</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><abstract>We report a 94-GHz large-signal load-pull characterization of InP/GaAsSb double heterojunction bipolar transistors. The investigated devices have an emitter area of [Formula Omitted]. Biased for highest power added efficiency (PAE), an output power of 6.62 [Formula Omitted] (11 dBm), a power gain of 5.2 dB, and a PAE of 27.7% have been obtained. Biased for highest output power, 10.26 [Formula Omitted] (12.8 dBm) has been achieved without significant degradation of the PAE (25.2%) and the power gain (4.5 dB). [PUBLICATION ABSTRACT]</abstract><cop>New York</cop><pub>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</pub><doi>10.1109/LED.2014.2298251</doi></addata></record>
fulltext fulltext
identifier ISSN: 0741-3106
ispartof IEEE electron device letters, 2014-03, Vol.35 (3), p.321
issn 0741-3106
1558-0563
language eng
recordid cdi_proquest_journals_1506268746
source IEEE Electronic Library (IEL)
title 0.2-[Formula Omitted] InP/GaAsSb DHBT Power Performance With 10 [Formula Omitted] and 25% PAE at 94 GHz
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-19T14%3A04%3A04IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=0.2-%5BFormula%20Omitted%5D%20InP/GaAsSb%20DHBT%20Power%20Performance%20With%2010%20%5BFormula%20Omitted%5D%20and%2025%25%20PAE%20at%2094%20GHz&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Zaknoune,%20Mohammed&rft.date=2014-03-01&rft.volume=35&rft.issue=3&rft.spage=321&rft.pages=321-&rft.issn=0741-3106&rft.eissn=1558-0563&rft_id=info:doi/10.1109/LED.2014.2298251&rft_dat=%3Cproquest%3E3243090161%3C/proquest%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1506268746&rft_id=info:pmid/&rfr_iscdi=true