0.2-[Formula Omitted] InP/GaAsSb DHBT Power Performance With 10 [Formula Omitted] and 25% PAE at 94 GHz

0.2-[Formula Omitted] InP/GaAsSb DHBT Power Performance With 10 [Formula Omitted] and 25% PAE at 94 GHz

We report a 94-GHz large-signal load-pull characterization of InP/GaAsSb double heterojunction bipolar transistors. The investigated devices have an emitter area of [Formula Omitted]. Biased for highest power added efficiency (PAE), an output power of 6.62 [Formula Omitted] (11 dBm), a power gain of...

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Veröffentlicht in:IEEE electron device letters 2014-03, Vol.35 (3), p.321
Hauptverfasser: Zaknoune, Mohammed, Okada, Etienne, Mairiaux, Estelle, Roelens, Yannick, Ducatteau, Damien, Frijlink, Peter, Rocchi, Marc, Maher, Hassan
Format: Artikel
Sprache:eng
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Zusammenfassung:We report a 94-GHz large-signal load-pull characterization of InP/GaAsSb double heterojunction bipolar transistors. The investigated devices have an emitter area of [Formula Omitted]. Biased for highest power added efficiency (PAE), an output power of 6.62 [Formula Omitted] (11 dBm), a power gain of 5.2 dB, and a PAE of 27.7% have been obtained. Biased for highest output power, 10.26 [Formula Omitted] (12.8 dBm) has been achieved without significant degradation of the PAE (25.2%) and the power gain (4.5 dB). [PUBLICATION ABSTRACT]
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2014.2298251