3.7 kV Vertical GaN PN Diodes

There is a great interest in wide band-gap semiconductor devices for power electronics application. In this letter, vertical GaN p-n diodes fabricated on bulk GaN substrates are discussed. The device layers are grown by MOCVD on low defect density (10 4 cm -2 ) bulk GaN substrates. The measured devi...

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Veröffentlicht in:	IEEE electron device letters 2014-02, Vol.35 (2), p.247-249
Hauptverfasser:	Kizilyalli, Isik C., Edwards, Andrew P., Nie, Hui, Bour, Dave, Prunty, Thomas, Disney, Don
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences avalanche breakdown Compound structure devices Electrical engineering. Electrical power engineering Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Gallium nitride Other multijunction devices. Power transistors. Thyristors power diodes Power electronics, power supplies power-semiconductor devices Schottky diodes Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Silicon carbide Substrates
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Beschreibung
Zusammenfassung:	There is a great interest in wide band-gap semiconductor devices for power electronics application. In this letter, vertical GaN p-n diodes fabricated on bulk GaN substrates are discussed. The device layers are grown by MOCVD on low defect density (10 4 cm -2 ) bulk GaN substrates. The measured devices show breakdown voltages of 3.7 kV with an area differential specific on-resistance (Rsp) of 2.95 mΩ-cm 2.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2013.2294175