Probing defects and impurity-induced electronic structure changes in single and double-layer hexagonal boron nitride sheets with STEM-EELS

Probing defects and impurity-induced electronic structure changes in single and double-layer hexagonal boron nitride sheets with STEM-EELS

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

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Veröffentlicht in:Microscopy and microanalysis 2012-07, Vol.18 (S2), p.1526-1527
Hauptverfasser: Ramasse, Q., Alem, N., Zettl, A., Yazyev, O., Pan, C., Nair, R., Jalil, R., Zan, R., Bangert, U., Novoselov, K.S., Seabourne, C., Scott, A.J.
Format: Artikel
Sprache:eng
Schlagworte:
Boron
Physical Science Symposium
Structural, Chemical and Physical Properties of Carbon-based and Related Nanomaterials-04
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Zusammenfassung:Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.
ISSN:1431-9276
1435-8115
DOI:10.1017/S1431927612009488