Scanning Probe Microscopy Based Characterizations of III-V Semiconductor Quantum Well Devices

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

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Veröffentlicht in:Microscopy and microanalysis 2012-07, Vol.18 (S2), p.1810-1811
Hauptverfasser: Yakes, M., Mahadik, N., Qadri, S.B., Aifer, E.H., Vurgaftman, I., Meyer, J.R., Laracuente, A.R.
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container_end_page 1811
container_issue S2
container_start_page 1810
container_title Microscopy and microanalysis
container_volume 18
creator Yakes, M.
Mahadik, N.
Qadri, S.B.
Aifer, E.H.
Vurgaftman, I.
Meyer, J.R.
Laracuente, A.R.
description Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.
doi_str_mv 10.1017/S1431927612010902
format Article
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subjects Microscopy
Microscopy and Analysis of Quantum Structures and Devices-01
Physical Science Symposium
title Scanning Probe Microscopy Based Characterizations of III-V Semiconductor Quantum Well Devices
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