Scanning Probe Microscopy Based Characterizations of III-V Semiconductor Quantum Well Devices

Scanning Probe Microscopy Based Characterizations of III-V Semiconductor Quantum Well Devices

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

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Bibliographische Detailangaben
Veröffentlicht in:Microscopy and microanalysis 2012-07, Vol.18 (S2), p.1810-1811
Hauptverfasser: Yakes, M., Mahadik, N., Qadri, S.B., Aifer, E.H., Vurgaftman, I., Meyer, J.R., Laracuente, A.R.
Format: Artikel
Sprache:eng
Schlagworte:
Microscopy
Microscopy and Analysis of Quantum Structures and Devices-01
Physical Science Symposium
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Beschreibung
Zusammenfassung:Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.
ISSN:1431-9276
1435-8115
DOI:10.1017/S1431927612010902