The Acceptor Level in ZnSe Film with Co-doping of P and Li

The Acceptor Level in ZnSe Film with Co-doping of P and Li

The acceptor level of phosphorus in vapor phase epitaxial ZnSe films co-doped with phosphorus and lithium was investigated. A new donor-acceptor pair (DAP) emission was observed in the photo-luminescence property. Using DAP analysis, the acceptor level was found to be 0.151eV. It is considered that...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Hyōmen gijutsu 1995/10/01, Vol.46(10), pp.964-965
Hauptverfasser: MURANOI, Tetsuo, ISHII, Nobunao
Format: Artikel
Sprache:eng
Schlagworte:
Acceptor Level
Co-doping
DAP
Phosphorus and Lithium
ZnSe
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The acceptor level of phosphorus in vapor phase epitaxial ZnSe films co-doped with phosphorus and lithium was investigated. A new donor-acceptor pair (DAP) emission was observed in the photo-luminescence property. Using DAP analysis, the acceptor level was found to be 0.151eV. It is considered that the acceptor level in ZnSe films co-doped with phosphorus and lithium is due to phosphorus complexes.
ISSN:0915-1869
1884-3409
DOI:10.4139/sfj.46.964