Effect of Oxygen Ion Implanted TiO2 Film on Photocatalysis
The photoelectrochemical behavior of sol-gel formed TiO2 film was studied, to improve photocatalysis. TiO2 film baked at 773K was confirmed to be anatase, showing n-type semiconductivity under illumination. TiO2 photopotential was reduced to -400mV vs. Ag/AgCl under UV illumination; when the lamp tu...
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Veröffentlicht in: | Hyōmen gijutsu 1999/01/01, Vol.50(1), pp.90-94 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng ; jpn |
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Online-Zugang: | Volltext |
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Zusammenfassung: | The photoelectrochemical behavior of sol-gel formed TiO2 film was studied, to improve photocatalysis. TiO2 film baked at 773K was confirmed to be anatase, showing n-type semiconductivity under illumination. TiO2 photopotential was reduced to -400mV vs. Ag/AgCl under UV illumination; when the lamp turn off, it gradually increased to the initial potential over a day. Above phenomenon was found more effective in TiO2 coated on oxygen ion implanted stainless steel substrate. |
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ISSN: | 0915-1869 1884-3409 |
DOI: | 10.4139/sfj.50.90 |