Effect of Oxygen Ion Implanted TiO2 Film on Photocatalysis

The photoelectrochemical behavior of sol-gel formed TiO2 film was studied, to improve photocatalysis. TiO2 film baked at 773K was confirmed to be anatase, showing n-type semiconductivity under illumination. TiO2 photopotential was reduced to -400mV vs. Ag/AgCl under UV illumination; when the lamp tu...

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Veröffentlicht in:Hyōmen gijutsu 1999/01/01, Vol.50(1), pp.90-94
Hauptverfasser: INOUE, Youichi, IKEDA, Yukiko, YOSHIMURA, Yasuhiro
Format: Artikel
Sprache:eng ; jpn
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Zusammenfassung:The photoelectrochemical behavior of sol-gel formed TiO2 film was studied, to improve photocatalysis. TiO2 film baked at 773K was confirmed to be anatase, showing n-type semiconductivity under illumination. TiO2 photopotential was reduced to -400mV vs. Ag/AgCl under UV illumination; when the lamp turn off, it gradually increased to the initial potential over a day. Above phenomenon was found more effective in TiO2 coated on oxygen ion implanted stainless steel substrate.
ISSN:0915-1869
1884-3409
DOI:10.4139/sfj.50.90