Modeling of the interstitial diffusion of boron in crystalline silicon

The redistribution of ion-implanted boron in crystalline silicon under fast low-temperature annealing has been modeled. It has been shown that in the region of low impurity concentration "tails" are formed by long-range migration of interstitial boron atoms.

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Bibliographische Detailangaben
Veröffentlicht in:	Journal of engineering physics and thermophysics 2012-07, Vol.85 (4), p.926-931
Hauptverfasser:	Velichko, O. I., Aksenov, V. V., Kovaleva, A. P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Analysis Classical Mechanics Complex Systems Engineering Engineering Thermodynamics Heat and Mass Transfer Industrial Chemistry/Chemical Engineering Silicon Thermodynamics
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	The redistribution of ion-implanted boron in crystalline silicon under fast low-temperature annealing has been modeled. It has been shown that in the region of low impurity concentration "tails" are formed by long-range migration of interstitial boron atoms.
ISSN:	1062-0125 1573-871X
DOI:	10.1007/s10891-012-0731-9