Mitigation of Sn Whisker Growth by Small Bi Additions
In this study, the morphological development of electroplated matte Sn and Sn- x Bi ( x = 0.5 wt.%, 1.0 wt.%, 2.0 wt.%) film surfaces was investigated under diverse testing conditions: 1-year room-temperature storage, high temperature and humidity (HTH), mechanical loading by indentation, and therm...
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| Veröffentlicht in: | Journal of electronic materials 2014, Vol.43 (1), p.1-8 |
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| creator | Jo, Jung-Lae Nagao, Shijo Hamasaki, Kyoko Tsujimoto, Masanobu Sugahara, Tohru Suganuma, Katsuaki |
| description | In this study, the morphological development of electroplated matte Sn and Sn-
x
Bi (
x
= 0.5 wt.%, 1.0 wt.%, 2.0 wt.%) film surfaces was investigated under diverse testing conditions: 1-year room-temperature storage, high temperature and humidity (HTH), mechanical loading by indentation, and thermal cycling. These small Bi additions prevented Sn whisker formation; no whisker growth was observed on any Sn-
x
Bi surface during either the room-temperature storage or HTH testing. In the indentation loading and thermal cycling tests, short ( |
| doi_str_mv | 10.1007/s11664-013-2706-9 |
| format | Article |
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x
Bi (
x
= 0.5 wt.%, 1.0 wt.%, 2.0 wt.%) film surfaces was investigated under diverse testing conditions: 1-year room-temperature storage, high temperature and humidity (HTH), mechanical loading by indentation, and thermal cycling. These small Bi additions prevented Sn whisker formation; no whisker growth was observed on any Sn-
x
Bi surface during either the room-temperature storage or HTH testing. In the indentation loading and thermal cycling tests, short (<5
μ
m) surface extrusions were occasionally observed, but only on
x
= 0.5 wt.% and 1.0 wt.% plated samples. In all test cases, Sn-2Bi plated samples exhibited excellent whisker mitigation, while pure Sn samples always generated many whiskers on the surface. We confirmed that the addition of Bi into Sn refined the grain size of the as-plated films and altered the columnar structure to form equiaxed grains. The storage conditions allowed the formation of intermetallic compounds between the plated layer and the substrate regardless of the Bi addition. However, the growth patterns became more uniform with increasing amounts of Bi. These microstructural improvements with Bi addition effectively released the internal stress from Sn plating, thus mitigating whisker formation on the surface under various environments.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-013-2706-9</identifier><identifier>CODEN: JECMA5</identifier><language>eng</language><publisher>Boston: Springer US</publisher><subject>Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Electronics ; Electronics and Microelectronics ; Instrumentation ; Materials Science ; Optical and Electronic Materials ; Plating ; Solid State Physics ; Tin</subject><ispartof>Journal of electronic materials, 2014, Vol.43 (1), p.1-8</ispartof><rights>TMS 2013</rights><rights>TMS 2014</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c359t-85291109fb1cc00701b771fc934c038278e765fb11ee15fab91ad87051e35383</citedby><cites>FETCH-LOGICAL-c359t-85291109fb1cc00701b771fc934c038278e765fb11ee15fab91ad87051e35383</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11664-013-2706-9$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11664-013-2706-9$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Jo, Jung-Lae</creatorcontrib><creatorcontrib>Nagao, Shijo</creatorcontrib><creatorcontrib>Hamasaki, Kyoko</creatorcontrib><creatorcontrib>Tsujimoto, Masanobu</creatorcontrib><creatorcontrib>Sugahara, Tohru</creatorcontrib><creatorcontrib>Suganuma, Katsuaki</creatorcontrib><title>Mitigation of Sn Whisker Growth by Small Bi Additions</title><title>Journal of electronic materials</title><addtitle>Journal of Elec Materi</addtitle><description>In this study, the morphological development of electroplated matte Sn and Sn-
x
Bi (
x
= 0.5 wt.%, 1.0 wt.%, 2.0 wt.%) film surfaces was investigated under diverse testing conditions: 1-year room-temperature storage, high temperature and humidity (HTH), mechanical loading by indentation, and thermal cycling. These small Bi additions prevented Sn whisker formation; no whisker growth was observed on any Sn-
x
Bi surface during either the room-temperature storage or HTH testing. In the indentation loading and thermal cycling tests, short (<5
μ
m) surface extrusions were occasionally observed, but only on
x
= 0.5 wt.% and 1.0 wt.% plated samples. In all test cases, Sn-2Bi plated samples exhibited excellent whisker mitigation, while pure Sn samples always generated many whiskers on the surface. We confirmed that the addition of Bi into Sn refined the grain size of the as-plated films and altered the columnar structure to form equiaxed grains. The storage conditions allowed the formation of intermetallic compounds between the plated layer and the substrate regardless of the Bi addition. However, the growth patterns became more uniform with increasing amounts of Bi. These microstructural improvements with Bi addition effectively released the internal stress from Sn plating, thus mitigating whisker formation on the surface under various environments.</description><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Electronics</subject><subject>Electronics and Microelectronics</subject><subject>Instrumentation</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Plating</subject><subject>Solid State Physics</subject><subject>Tin</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid>8G5</sourceid><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNp1kD1PwzAQhi0EEqHwA9gsMRvu4ji2x1JBQSpiaCXYrHw4rUuaFDtV1X9PojCwMN1wz_ve6SHkFuEeAeRDQEzThAFyFktImT4jEYqEM1Tp5zmJgKfIRMzFJbkKYQuAAhVGRLy5zq2zzrUNbSu6bOjHxoUv6-nct8duQ_MTXe6yuqaPjk7L0g1kuCYXVVYHe_M7J2T1_LSavbDF-_x1Nl2wggvdMSVijQi6yrEo-i8BcymxKjRPCuAqlsrKVPRbtBZFleUas1JJEGi54IpPyN1Yu_ft98GGzmzbg2_6iwYTiVqoROqewpEqfBuCt5XZe7fL_MkgmEGOGeWYXo4Z5JghE4-Z0LPN2vo_zf-GfgB2lGRk</recordid><startdate>2014</startdate><enddate>2014</enddate><creator>Jo, Jung-Lae</creator><creator>Nagao, Shijo</creator><creator>Hamasaki, Kyoko</creator><creator>Tsujimoto, Masanobu</creator><creator>Sugahara, Tohru</creator><creator>Suganuma, Katsuaki</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M2O</scope><scope>M2P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0X</scope></search><sort><creationdate>2014</creationdate><title>Mitigation of Sn Whisker Growth by Small Bi Additions</title><author>Jo, Jung-Lae ; Nagao, Shijo ; Hamasaki, Kyoko ; Tsujimoto, Masanobu ; Sugahara, Tohru ; Suganuma, Katsuaki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c359t-85291109fb1cc00701b771fc934c038278e765fb11ee15fab91ad87051e35383</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Electronics</topic><topic>Electronics and Microelectronics</topic><topic>Instrumentation</topic><topic>Materials Science</topic><topic>Optical and Electronic Materials</topic><topic>Plating</topic><topic>Solid State Physics</topic><topic>Tin</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jo, Jung-Lae</creatorcontrib><creatorcontrib>Nagao, Shijo</creatorcontrib><creatorcontrib>Hamasaki, Kyoko</creatorcontrib><creatorcontrib>Tsujimoto, Masanobu</creatorcontrib><creatorcontrib>Sugahara, Tohru</creatorcontrib><creatorcontrib>Suganuma, Katsuaki</creatorcontrib><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>STEM Database</collection><collection>ProQuest Pharma Collection</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Research Library (Alumni Edition)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>Research Library Prep</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Research Library</collection><collection>Science Database</collection><collection>Engineering Database</collection><collection>Research Library (Corporate)</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>ProQuest Central Basic</collection><collection>SIRS Editorial</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jo, Jung-Lae</au><au>Nagao, Shijo</au><au>Hamasaki, Kyoko</au><au>Tsujimoto, Masanobu</au><au>Sugahara, Tohru</au><au>Suganuma, Katsuaki</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Mitigation of Sn Whisker Growth by Small Bi Additions</atitle><jtitle>Journal of electronic materials</jtitle><stitle>Journal of Elec Materi</stitle><date>2014</date><risdate>2014</risdate><volume>43</volume><issue>1</issue><spage>1</spage><epage>8</epage><pages>1-8</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><coden>JECMA5</coden><abstract>In this study, the morphological development of electroplated matte Sn and Sn-
x
Bi (
x
= 0.5 wt.%, 1.0 wt.%, 2.0 wt.%) film surfaces was investigated under diverse testing conditions: 1-year room-temperature storage, high temperature and humidity (HTH), mechanical loading by indentation, and thermal cycling. These small Bi additions prevented Sn whisker formation; no whisker growth was observed on any Sn-
x
Bi surface during either the room-temperature storage or HTH testing. In the indentation loading and thermal cycling tests, short (<5
μ
m) surface extrusions were occasionally observed, but only on
x
= 0.5 wt.% and 1.0 wt.% plated samples. In all test cases, Sn-2Bi plated samples exhibited excellent whisker mitigation, while pure Sn samples always generated many whiskers on the surface. We confirmed that the addition of Bi into Sn refined the grain size of the as-plated films and altered the columnar structure to form equiaxed grains. The storage conditions allowed the formation of intermetallic compounds between the plated layer and the substrate regardless of the Bi addition. However, the growth patterns became more uniform with increasing amounts of Bi. These microstructural improvements with Bi addition effectively released the internal stress from Sn plating, thus mitigating whisker formation on the surface under various environments.</abstract><cop>Boston</cop><pub>Springer US</pub><doi>10.1007/s11664-013-2706-9</doi><tpages>8</tpages><oa>free_for_read</oa></addata></record> |
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| subjects | Characterization and Evaluation of Materials Chemistry and Materials Science Electronics Electronics and Microelectronics Instrumentation Materials Science Optical and Electronic Materials Plating Solid State Physics Tin |
| title | Mitigation of Sn Whisker Growth by Small Bi Additions |
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