Mitigation of Sn Whisker Growth by Small Bi Additions

In this study, the morphological development of electroplated matte Sn and Sn- x Bi ( x = 0.5 wt.%, 1.0 wt.%, 2.0 wt.%) film surfaces was investigated under diverse testing conditions: 1-year room-temperature storage, high temperature and humidity (HTH), mechanical loading by indentation, and therm...

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Veröffentlicht in:	Journal of electronic materials 2014, Vol.43 (1), p.1-8
Hauptverfasser:	Jo, Jung-Lae, Nagao, Shijo, Hamasaki, Kyoko, Tsujimoto, Masanobu, Sugahara, Tohru, Suganuma, Katsuaki
Format:	Artikel
Sprache:	eng
Schlagworte:	Characterization and Evaluation of Materials Chemistry and Materials Science Electronics Electronics and Microelectronics Instrumentation Materials Science Optical and Electronic Materials Plating Solid State Physics Tin
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Beschreibung
Zusammenfassung:	In this study, the morphological development of electroplated matte Sn and Sn- x Bi ( x = 0.5 wt.%, 1.0 wt.%, 2.0 wt.%) film surfaces was investigated under diverse testing conditions: 1-year room-temperature storage, high temperature and humidity (HTH), mechanical loading by indentation, and thermal cycling. These small Bi additions prevented Sn whisker formation; no whisker growth was observed on any Sn- x Bi surface during either the room-temperature storage or HTH testing. In the indentation loading and thermal cycling tests, short (
ISSN:	0361-5235 1543-186X
DOI:	10.1007/s11664-013-2706-9