Lifetime Estimation of High Power White LEDs
We have developed a high power and long lifetime white LED module which can be used in general lighting applications. Since the materials in the package are very robust at high temperatures, the device can be operated at junction temperatures (Tj) over 250°C. Moreover, the thermal resistance of the...
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Veröffentlicht in: | Journal of Light & Visual Environment 2007, Vol.31(1), pp.11-18 |
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creator | ISHIZAKI, Shinya KIMURA, Hideyoshi SUGIMOTO, Masaru |
description | We have developed a high power and long lifetime white LED module which can be used in general lighting applications. Since the materials in the package are very robust at high temperatures, the device can be operated at junction temperatures (Tj) over 250°C. Moreover, the thermal resistance of the package is less than 20°C/W. Therefore the device can be operated at input power as high as 2.4 W, making it possible to shorten the duration of accelerated lifetime tests. An acceleration ratio greater than 100 has been achieved. Assuming a thermally activated degradation process and applying the Arrhenius model, the LED chip lifetime (defined as a 50% reduction in luminous flux) is determined to be 40,000 hours for a Tj of 130°C. The activation energy of the degradation process was determined to be 1.55 eV. |
doi_str_mv | 10.2150/jlve.31.11 |
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Since the materials in the package are very robust at high temperatures, the device can be operated at junction temperatures (Tj) over 250°C. Moreover, the thermal resistance of the package is less than 20°C/W. Therefore the device can be operated at input power as high as 2.4 W, making it possible to shorten the duration of accelerated lifetime tests. An acceleration ratio greater than 100 has been achieved. Assuming a thermally activated degradation process and applying the Arrhenius model, the LED chip lifetime (defined as a 50% reduction in luminous flux) is determined to be 40,000 hours for a Tj of 130°C. The activation energy of the degradation process was determined to be 1.55 eV.</description><identifier>ISSN: 0387-8805</identifier><identifier>EISSN: 1349-8398</identifier><identifier>DOI: 10.2150/jlve.31.11</identifier><language>eng</language><publisher>Tokyo: The Illuminating Engineering Institute of Japan</publisher><subject>Arrhenius ; GaN ; high power ; InGaN ; LED ; lifetime ; white</subject><ispartof>Journal of Light & Visual Environment, 2007, Vol.31(1), pp.11-18</ispartof><rights>2007 The Illuminating Engineering Institute of Japan</rights><rights>Copyright Japan Science and Technology Agency 2007</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c4331-5d2b3d241daf8dca63d6e429c3ad073a27b0384da9ced31bab4dbc22340c7c3d3</citedby><cites>FETCH-LOGICAL-c4331-5d2b3d241daf8dca63d6e429c3ad073a27b0384da9ced31bab4dbc22340c7c3d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,1883,27924,27925</link.rule.ids></links><search><creatorcontrib>ISHIZAKI, Shinya</creatorcontrib><creatorcontrib>KIMURA, Hideyoshi</creatorcontrib><creatorcontrib>SUGIMOTO, Masaru</creatorcontrib><title>Lifetime Estimation of High Power White LEDs</title><title>Journal of Light & Visual Environment</title><description>We have developed a high power and long lifetime white LED module which can be used in general lighting applications. Since the materials in the package are very robust at high temperatures, the device can be operated at junction temperatures (Tj) over 250°C. Moreover, the thermal resistance of the package is less than 20°C/W. Therefore the device can be operated at input power as high as 2.4 W, making it possible to shorten the duration of accelerated lifetime tests. An acceleration ratio greater than 100 has been achieved. Assuming a thermally activated degradation process and applying the Arrhenius model, the LED chip lifetime (defined as a 50% reduction in luminous flux) is determined to be 40,000 hours for a Tj of 130°C. The activation energy of the degradation process was determined to be 1.55 eV.</description><subject>Arrhenius</subject><subject>GaN</subject><subject>high power</subject><subject>InGaN</subject><subject>LED</subject><subject>lifetime</subject><subject>white</subject><issn>0387-8805</issn><issn>1349-8398</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNpFkEFLw0AQhRdRsFYv_oKANzF1Z2eTbE4ibbVCQA-Kx2WzO2kTalN3U8V_b0qkXuYd5mPem8fYJfCJgITfNusvmiBMAI7YCFDmscJcHbMRR5XFSvHklJ2F0HCOApUYsZuirqirPyiah15MV7ebqK2iRb1cRS_tN_nofVV3FBXzWThnJ5VZB7r40zF7e5i_Thdx8fz4NL0vYisRIU6cKNEJCc5UylmToktJityicTxDI7KyjyOdyS05hNKU0pVWCJTcZhYdjtnVcHfr288dhU437c5veksNMsWcp0nCe-p6oKxvQ_BU6a3vP_A_Grjet6H3bWgEDdDDdwPchM4s6YAa39V2Tf_oMAAOG7syXtMGfwFIH2hX</recordid><startdate>20070101</startdate><enddate>20070101</enddate><creator>ISHIZAKI, Shinya</creator><creator>KIMURA, Hideyoshi</creator><creator>SUGIMOTO, Masaru</creator><general>The Illuminating Engineering Institute of Japan</general><general>Japan Science and Technology Agency</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20070101</creationdate><title>Lifetime Estimation of High Power White LEDs</title><author>ISHIZAKI, Shinya ; KIMURA, Hideyoshi ; SUGIMOTO, Masaru</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c4331-5d2b3d241daf8dca63d6e429c3ad073a27b0384da9ced31bab4dbc22340c7c3d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Arrhenius</topic><topic>GaN</topic><topic>high power</topic><topic>InGaN</topic><topic>LED</topic><topic>lifetime</topic><topic>white</topic><toplevel>online_resources</toplevel><creatorcontrib>ISHIZAKI, Shinya</creatorcontrib><creatorcontrib>KIMURA, Hideyoshi</creatorcontrib><creatorcontrib>SUGIMOTO, Masaru</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of Light & Visual Environment</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>ISHIZAKI, Shinya</au><au>KIMURA, Hideyoshi</au><au>SUGIMOTO, Masaru</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Lifetime Estimation of High Power White LEDs</atitle><jtitle>Journal of Light & Visual Environment</jtitle><date>2007-01-01</date><risdate>2007</risdate><volume>31</volume><issue>1</issue><spage>11</spage><epage>18</epage><pages>11-18</pages><issn>0387-8805</issn><eissn>1349-8398</eissn><abstract>We have developed a high power and long lifetime white LED module which can be used in general lighting applications. Since the materials in the package are very robust at high temperatures, the device can be operated at junction temperatures (Tj) over 250°C. Moreover, the thermal resistance of the package is less than 20°C/W. Therefore the device can be operated at input power as high as 2.4 W, making it possible to shorten the duration of accelerated lifetime tests. An acceleration ratio greater than 100 has been achieved. Assuming a thermally activated degradation process and applying the Arrhenius model, the LED chip lifetime (defined as a 50% reduction in luminous flux) is determined to be 40,000 hours for a Tj of 130°C. The activation energy of the degradation process was determined to be 1.55 eV.</abstract><cop>Tokyo</cop><pub>The Illuminating Engineering Institute of Japan</pub><doi>10.2150/jlve.31.11</doi><tpages>8</tpages><oa>free_for_read</oa></addata></record> |
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subjects | Arrhenius GaN high power InGaN LED lifetime white |
title | Lifetime Estimation of High Power White LEDs |
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