Synthesis of Poly(oxoammonium salt)s and Their Electrical Properties in the Organic Thin Film Device

Synthesis of Poly(oxoammonium salt)s and Their Electrical Properties in the Organic Thin Film Device

Two redox-active poly(oxoammonium salt)s were synthesized via chemical oxidation of a TEMPO-substituted polymer, or conventional radical polymerization of the oxoammonium monomer, respectively. The diode-structured thin film device composed of poly(oxoammonium salt) with radical conc. of 6–43% exhib...

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Veröffentlicht in:Chemistry letters 2009-12, Vol.38 (12), p.1160-1161
Hauptverfasser: Suga, Takeo, Takeuchi, Shunya, Ozaki, Takanori, Sakata, Miki, Oyaizu, Kenichi, Nishide, Hiroyuki
Format: Artikel
Sprache:eng
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Zusammenfassung:Two redox-active poly(oxoammonium salt)s were synthesized via chemical oxidation of a TEMPO-substituted polymer, or conventional radical polymerization of the oxoammonium monomer, respectively. The diode-structured thin film device composed of poly(oxoammonium salt) with radical conc. of 6–43% exhibited a resistive switching behavior (ON–OFF ratio >103), in contrast to the radical-free poly(oxoammonium salt), which revealed that the coexistence of radical/oxoammonium salts contributed to a significant change in I–V characteristics.
ISSN:0366-7022
1348-0715
DOI:10.1246/cl.2009.1160