Passivation of black silicon boron emitters with atomic layer deposited aluminum oxide

The nanostructured surface – also called black silicon (b‐Si) – is a promising texture for solar cells because of its extremely low reflectance combined with low surface recombination obtained with atomic layer deposited (ALD) thin films. However, the challenges in keeping the excellent optical properties and passivation in further processing have not been addressed before. Here we study especially the applicability of the ALD passivation on highly boron doped emitters that is present in crystalline silicon solar cells. The results show that the nanostructured boron emitters can be passivated efficiently using ALD Al2O3 reaching emitter saturation current densities as low as 51 fA/cm2. Furthermore, reflectance values less than 0.5% after processing show that the different process steps are not detrimental for the low reflectance of b‐Si. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) The nanostructured surface – also called black silicon (b‐Si) – is a promising texture for solar cells because of its extremely low reflectance combined with efficient surface passivation by atomic layer deposited (ALD) thin films. In this Letter, the authors show how different boron diffusions affect the optical properties of b‐Si and demonstrate that also highly boron‐doped b‐Si emitters can be passivated with atomic layer deposited Al2O3 by reaching J0e values as low as 51 fA/cm2.