SIMS analysis of joining interface between silicon nitride and metal

Joining interfaces between silicon nitride (Si3N4) and metal were analyzed by SIMS. The depth profile and 3-dimensional analyses of the joining interfaces were carried out using selected specific ions. Analytical conditions were as follows : primary ion, O+2, 12 kV, 500 nA ; sweep area, 0.01mm2 ; an...

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Veröffentlicht in:	BUNSEKI KAGAKU 1989, Vol.38(10), pp.505-509
Hauptverfasser:	SHICHI, Yushi, MATSUKIYO, Kenzi, MATSUNAGA, Masazi
Format:	Artikel
Sprache:	eng ; jpn
Schlagworte:	3-dimensional analysis depth profile analysis SIMS analysis, joining interface
Online-Zugang:	Volltext
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