SIMS analysis of joining interface between silicon nitride and metal

Joining interfaces between silicon nitride (Si3N4) and metal were analyzed by SIMS. The depth profile and 3-dimensional analyses of the joining interfaces were carried out using selected specific ions. Analytical conditions were as follows : primary ion, O+2, 12 kV, 500 nA ; sweep area, 0.01mm2 ; and acquiring area, 100μm2. As the specific ion of titanium silicide (Ti5Si3), m/z=76 was chosen. Analytical results comfirmed the previous results by X-ray photoelectron spectroscopy and AEM that the joning interface of Si3N4-metal with active metal and brazing metals consisted of two layers. A small quantity of silver was detected in the reaction layer.