Fabrication of Ga2O3 thin films by aqueous solution deposition

Fabrication of Ga2O3 thin films by aqueous solution deposition

Ga2O3 thin films were fabricated using the Ga nitrate and GaOOH aqueous solutions. The films were crystallized as β-Ga2O3 phase by heating at 700°C and the band gap of resultant films was about 4.9 eV. The films were uniform and the film from Ga nitrate solution was dense with porosity of about 3%....

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Veröffentlicht in:Journal of the Ceramic Society of Japan 2009, Vol.117(1369), pp.973-977
Hauptverfasser: OHYA, Yutaka, OKANO, Jyunya, KASUYA, Yuki, BAN, Takayuki
Format: Artikel
Sprache:eng
Schlagworte:
Aqueous solution deposition
Electrical resistivity
Ga2O3 thin film
Microstructure
Optical property
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Zusammenfassung:Ga2O3 thin films were fabricated using the Ga nitrate and GaOOH aqueous solutions. The films were crystallized as β-Ga2O3 phase by heating at 700°C and the band gap of resultant films was about 4.9 eV. The films were uniform and the film from Ga nitrate solution was dense with porosity of about 3%. The resistivity of the blank film was about 107 Ω cm. The doped films with Ti and Zr exhibited rectifying properties on ITO sputtered glass substrate.
ISSN:1882-0743
1348-6535
DOI:10.2109/jcersj2.117.973