Low-Temperature Polycrystalline Silicon Thin-Film Transistors Enhanced by Diode-Pumped Solid State Green Continuous-Wave Laser

A novel diode-pumped solid-state continuous-wave (CW) laser technology has been demonstrated for high-performance low-temperature polycrystalline silicon thin-film transistors (TFTs) fabrication. The CW laser-crystallized (CWC) poly-Si thin films indicated the excellent crystallinity with the flat surface morphology at grain boundary. Besides, the CW laser activation is a low-thermal budget process and can achieve the lower sheet resistance of 50 Ω/□ and uniformly redistributed dopant profiles. The n-channel CWC TFTs revealed the superior field-effect mobility reaching 505 cm2/V-s and the lower subthreshold swing as compared with the conventional excimer laser-crystallized ones.