Characteristics of CA Resist in EUV Lithography

According to the synchronous scanning of the mask and wafer with EUVL laboratory tool (ETS-1) with reduction optical system which consisted of three-aspherical-mirror in the NewSUBARU facilities succeeded in the line of 60nm and the space pattern formation in the exposure region of 10mm×10mm. Compar...

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Veröffentlicht in:	Journal of Photopolymer Science and Technology 2002, Vol.15(3), pp.361-366
Hauptverfasser:	Hamamoto, Kazuhiro, Watanabe, Takeo, Hada, Hideo, Komano, Hiroshi, Kinoshita, Hiroo
Format:	Artikel
Sprache:	eng
Schlagworte:	CA resist Extreme Ultraviolet Lithography large field exposure
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	According to the synchronous scanning of the mask and wafer with EUVL laboratory tool (ETS-1) with reduction optical system which consisted of three-aspherical-mirror in the NewSUBARU facilities succeeded in the line of 60nm and the space pattern formation in the exposure region of 10mm×10mm. Comparing the result of exposure characteristics for positive-tone resist for KrF and EB, KrF chemically amplified resist has better characteristics than EB chemically amplified resist. The development of suitable resist for EUVL that the resolution performance and sensitivity are good, and the amount of outgassing is low will be advanced based on KrF resist.
ISSN:	0914-9244 1349-6336
DOI:	10.2494/photopolymer.15.361