Effect of Re-sticking Acid on Resist Profile
We investigated resist profile change caused by re-sticking acid from exposed area during PEB. Using high activation energy type chemically amplified positive resist, the profile changed from T-top to rounded profile with increasing Exposed Area Ratio (EAR). We thought that this profile change was c...
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| Veröffentlicht in: | Journal of Photopolymer Science and Technology 2001, Vol.14(3), pp.427-434 |
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| container_title | Journal of Photopolymer Science and Technology |
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| creator | Shiobara, Eishi Kawamura, Daisuke Matsunaga, Kentaro Onishi, Yasunobu |
| description | We investigated resist profile change caused by re-sticking acid from exposed area during PEB. Using high activation energy type chemically amplified positive resist, the profile changed from T-top to rounded profile with increasing Exposed Area Ratio (EAR). We thought that this profile change was caused by acid evaporation from exposed area and its re-sticking on patterned area. To estimate the effect of re-sticking acid, we performed resist sandwich tests and observed resist profile change caused by re-sticking acid. The results thereby obtained support the model we propose. To reduce the effect of re-sticking acid, we tried to use an OverCoat Layer (OCL). The effect of OCL was certified to be useful during PEB not during exposure. |
| doi_str_mv | 10.2494/photopolymer.14.427 |
| format | Article |
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Using high activation energy type chemically amplified positive resist, the profile changed from T-top to rounded profile with increasing Exposed Area Ratio (EAR). We thought that this profile change was caused by acid evaporation from exposed area and its re-sticking on patterned area. To estimate the effect of re-sticking acid, we performed resist sandwich tests and observed resist profile change caused by re-sticking acid. The results thereby obtained support the model we propose. To reduce the effect of re-sticking acid, we tried to use an OverCoat Layer (OCL). 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The effect of OCL was certified to be useful during PEB not during exposure.</description><subject>Acid evaporation</subject><subject>Acid re-sticking</subject><subject>Chemically amplified resist</subject><subject>Exposure area ratio</subject><subject>High activation energy</subject><subject>Low-k1 lithography</subject><subject>Overcoat layer</subject><subject>Resist profile</subject><issn>0914-9244</issn><issn>1349-6336</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><recordid>eNpVkE1LxDAQhoMouK7-Ai8Fr7bmY9o0x2VZP2BBET2HNE12u3abmnQP--9NqSx6mYHhfWaYB6FbgjMKAh76rRtc79rj3viMQAaUn6EZYSDSgrHiHM2wIJAKCnCJrkLYYcxYnosZul9Za_SQOJu8mzQMjf5quk2y0E2duC7OQhOG5M0727TmGl1Y1QZz89vn6PNx9bF8TtevTy_LxTrVgClPqWCUc4t5IaDiQOuyqInSeVlyyIlgjBMouDIgatDUcgukMro0HOtKqzxnc3Q37e29-z6YMMidO_gunpQEAApKMBtTbEpp70LwxsreN3vlj5JgOWqRf7VEUkYtkVpP1C4MamNOjPLx99b8Y4goy5FjU4n4Kaa3ykvTsR8PYnL5</recordid><startdate>2001</startdate><enddate>2001</enddate><creator>Shiobara, Eishi</creator><creator>Kawamura, Daisuke</creator><creator>Matsunaga, Kentaro</creator><creator>Onishi, Yasunobu</creator><general>The Society of Photopolymer Science and Technology(SPST)</general><general>Japan Science and Technology Agency</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>2001</creationdate><title>Effect of Re-sticking Acid on Resist Profile</title><author>Shiobara, Eishi ; Kawamura, Daisuke ; Matsunaga, Kentaro ; Onishi, Yasunobu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c4027-293277f07694b742d86d1ac588745193371467ae49d4c2f7f41bec8e70cbca553</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><topic>Acid evaporation</topic><topic>Acid re-sticking</topic><topic>Chemically amplified resist</topic><topic>Exposure area ratio</topic><topic>High activation energy</topic><topic>Low-k1 lithography</topic><topic>Overcoat layer</topic><topic>Resist profile</topic><toplevel>online_resources</toplevel><creatorcontrib>Shiobara, Eishi</creatorcontrib><creatorcontrib>Kawamura, Daisuke</creatorcontrib><creatorcontrib>Matsunaga, Kentaro</creatorcontrib><creatorcontrib>Onishi, Yasunobu</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of Photopolymer Science and Technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shiobara, Eishi</au><au>Kawamura, Daisuke</au><au>Matsunaga, Kentaro</au><au>Onishi, Yasunobu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of Re-sticking Acid on Resist Profile</atitle><jtitle>Journal of Photopolymer Science and Technology</jtitle><addtitle>J. Photopol. Sci. Technol.</addtitle><date>2001</date><risdate>2001</risdate><volume>14</volume><issue>3</issue><spage>427</spage><epage>434</epage><pages>427-434</pages><issn>0914-9244</issn><eissn>1349-6336</eissn><abstract>We investigated resist profile change caused by re-sticking acid from exposed area during PEB. Using high activation energy type chemically amplified positive resist, the profile changed from T-top to rounded profile with increasing Exposed Area Ratio (EAR). We thought that this profile change was caused by acid evaporation from exposed area and its re-sticking on patterned area. To estimate the effect of re-sticking acid, we performed resist sandwich tests and observed resist profile change caused by re-sticking acid. The results thereby obtained support the model we propose. To reduce the effect of re-sticking acid, we tried to use an OverCoat Layer (OCL). The effect of OCL was certified to be useful during PEB not during exposure.</abstract><cop>Hiratsuka</cop><pub>The Society of Photopolymer Science and Technology(SPST)</pub><doi>10.2494/photopolymer.14.427</doi><tpages>8</tpages><oa>free_for_read</oa></addata></record> |
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| ispartof | Journal of Photopolymer Science and Technology, 2001, Vol.14(3), pp.427-434 |
| issn | 0914-9244 1349-6336 |
| language | eng |
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| subjects | Acid evaporation Acid re-sticking Chemically amplified resist Exposure area ratio High activation energy Low-k1 lithography Overcoat layer Resist profile |
| title | Effect of Re-sticking Acid on Resist Profile |
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