Effect of Re-sticking Acid on Resist Profile

We investigated resist profile change caused by re-sticking acid from exposed area during PEB. Using high activation energy type chemically amplified positive resist, the profile changed from T-top to rounded profile with increasing Exposed Area Ratio (EAR). We thought that this profile change was c...

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Veröffentlicht in:	Journal of Photopolymer Science and Technology 2001, Vol.14(3), pp.427-434
Hauptverfasser:	Shiobara, Eishi, Kawamura, Daisuke, Matsunaga, Kentaro, Onishi, Yasunobu
Format:	Artikel
Sprache:	eng
Schlagworte:	Acid evaporation Acid re-sticking Chemically amplified resist Exposure area ratio High activation energy Low-k1 lithography Overcoat layer Resist profile
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Zusammenfassung:	We investigated resist profile change caused by re-sticking acid from exposed area during PEB. Using high activation energy type chemically amplified positive resist, the profile changed from T-top to rounded profile with increasing Exposed Area Ratio (EAR). We thought that this profile change was caused by acid evaporation from exposed area and its re-sticking on patterned area. To estimate the effect of re-sticking acid, we performed resist sandwich tests and observed resist profile change caused by re-sticking acid. The results thereby obtained support the model we propose. To reduce the effect of re-sticking acid, we tried to use an OverCoat Layer (OCL). The effect of OCL was certified to be useful during PEB not during exposure.
ISSN:	0914-9244 1349-6336
DOI:	10.2494/photopolymer.14.427