Fine Pattern Replication by EUV Lithography

Fine pattern replication utilizing 3-aspherical mirror system settled on NewSUBARU beamline is described. The exposure system is composed of three aspherical mirrors, and the NA is 0.1. The diffraction limited resolution of 60nm was exposed on exposure area of 10mm×2mm. The Cr mask pattern fabricated by the wet etching method was used for the extreme ultraviolet lithography mask. The pattern of 100nm or less can be formed by with this Cr mask, and using photoresist of ZEP520 and SAL601. The line and space pattern width of 60nm was fabricated with ZEP520. In addition, it has been understood that the isolation line of 43nm width was replicated. Furthermore the hole pattern of 150nm was replicated.