Sensitized Transparent Photobase Additive For 193nm Lithography

This paper reports on the use of trimethyl sulfonium hydroxide as a base additive for 193nm applications, which is found to stabilize the latent image as well as act as a photodecomposable base. Delay time stability (exposure to post-exposure bake) of formulations consisting of trimethylsulfonium hy...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of Photopolymer Science and Technology 2000, Vol.13(4), pp.617-624
Hauptverfasser: Padmanaban, Munirathna, Bae, Jun-Born, Cook, Michelle, Kim, Woo-Kyu, Klauck-Jacobs, Axel, Kudo, Takanori, Rahman, M. Dalil, Dammel, Ralph R, Byers, Jeffrey D.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:This paper reports on the use of trimethyl sulfonium hydroxide as a base additive for 193nm applications, which is found to stabilize the latent image as well as act as a photodecomposable base. Delay time stability (exposure to post-exposure bake) of formulations consisting of trimethylsulfonium hydroxide is compared to that of a non-photodecomposable base (diethanolamine) in both methacrylate- and cycloolefin-based 193nm resists. Resist formulations made using the trimethylsulfonium base were delay-stable for more than one hour, while the reference formulation with diethanolamine showed T-top formation within 10 minutes delay time under the same conditions. The trialkylsulfonium hydroxide base additives were found to be photodecomposable by measuring the acid produced upon exposure. Compared to a non-photodecomposable base containing resist, the photodecomposable base containing resist produced more acid in the exposed areas under identical PAG/BASE molar ratios.
ISSN:0914-9244
1349-6336
DOI:10.2494/photopolymer.13.617