Development of Resist Materials for EUVL

The single layer chemically amplified resists are investigated for the extreme ultra-violet lithography. From the results of the sensitivity curve, the positive-tone resist based on poly (p-hydroxystyrene)-type polymers (PHS) have high sensitivities and high gamma values to the EUV exposure waveleng...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of Photopolymer Science and Technology 2000, Vol.13(3), pp.385-389
Hauptverfasser:	Irie, Shigeo, Shirayone, Shigeru, Mori, Shigeyasu, Oizumi, Hiroaki, Matsuzawa, Nobuyuki, Yano, Ei, Okazaki, Shinji, Watanabe, Takeo, Kinoshita, Hiroo
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemically amplified resist Extreme ultra-violet lithography Single layer resist
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!