Development of Resist Materials for EUVL

Development of Resist Materials for EUVL

The single layer chemically amplified resists are investigated for the extreme ultra-violet lithography. From the results of the sensitivity curve, the positive-tone resist based on poly (p-hydroxystyrene)-type polymers (PHS) have high sensitivities and high gamma values to the EUV exposure waveleng...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of Photopolymer Science and Technology 2000, Vol.13(3), pp.385-389
Hauptverfasser: Irie, Shigeo, Shirayone, Shigeru, Mori, Shigeyasu, Oizumi, Hiroaki, Matsuzawa, Nobuyuki, Yano, Ei, Okazaki, Shinji, Watanabe, Takeo, Kinoshita, Hiroo
Format: Artikel
Sprache:eng
Schlagworte:
Chemically amplified resist
Extreme ultra-violet lithography
Single layer resist
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The single layer chemically amplified resists are investigated for the extreme ultra-violet lithography. From the results of the sensitivity curve, the positive-tone resist based on poly (p-hydroxystyrene)-type polymers (PHS) have high sensitivities and high gamma values to the EUV exposure wavelength. Furthermore, by the optimization of both the dosage and the wafer focusing position, we succeed in replicating 0.056-μm-resist-pattern width.
ISSN:0914-9244
1349-6336
DOI:10.2494/photopolymer.13.385