Nano-scale fabrication by AFM lithography using a constant-current-control exposure system

Nano-scale fabrication by AFM lithography using a constant-current-control exposure system

Nano-scale AFM lithography using the space area between the resist patterns of a negative-type resist was developed. A 15-nm-wide space line pattern could be fabricated on a 50-nm-thick resist film. Using this method, we fabricated a 25-nm-wide Ni line pattern.

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Veröffentlicht in:Journal of Photopolymer Science and Technology 1999, Vol.12(2), pp.373-374
Hauptverfasser: Ishibashi, Masayoshi, Heike, Seiji, Sugita, Nami, Kajiyama, Hiroshi, Hashizume, Tomihiro
Format: Artikel
Sprache:eng
Schlagworte:
AFM
nano-lithography
scanning probe lithography
SPM
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Zusammenfassung:Nano-scale AFM lithography using the space area between the resist patterns of a negative-type resist was developed. A 15-nm-wide space line pattern could be fabricated on a 50-nm-thick resist film. Using this method, we fabricated a 25-nm-wide Ni line pattern.
ISSN:0914-9244
1349-6336
DOI:10.2494/photopolymer.12.373