Photo Alignment Materials with High Sensitivity to Near UV Light

Photo Alignment Materials with High Sensitivity to Near UV Light

We developed new photo alignment materials based on chalconyl structure with high sensitivity to near UV light. Poly(4-methacryloyloxy chalcone), PM4Ch, and its derivatives exhibited good LC alignment upon near UV exposure. The photoreactivity of chalconyl structure was high because due to longer wa...

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Veröffentlicht in:Journal of Photopolymer Science and Technology 1998, Vol.11(2), pp.187-192
Hauptverfasser: Makita, Yutaka, Natsui, Toru, Kimura, Shin-ichi, Nakata, Shoichi, Kimura, Masayuki, Matsuki, Yasuo, Takeuchi, Yasumasa
Format: Artikel
Sprache:eng
Schlagworte:
chalcone
near UV
photo alignment
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Zusammenfassung:We developed new photo alignment materials based on chalconyl structure with high sensitivity to near UV light. Poly(4-methacryloyloxy chalcone), PM4Ch, and its derivatives exhibited good LC alignment upon near UV exposure. The photoreactivity of chalconyl structure was high because due to longer wavelength of UV absorption. The high sensitivity of PM4Ch, compared with Poly(4′-methacryloyloxy chalcone), PMCh, could be explained by the suppression of isomerization and/or by the alignment capability of the side chain structure.
ISSN:0914-9244
1349-6336
DOI:10.2494/photopolymer.11.187