193nm Photoresist R&D The Risk & Challenge

In this paper we examine the technical and business environment in which 193 nm photoresist R&D is conducted today. Semiconductor industry predictions of lithographic requirements for future generations of DRAM and Logic indicate the need for 0.18 and sub 0.18μm manufacturing capability within the next decade. 248nm DUV lithography and the tool/photoresist infrastructure is just reaching the state required for manufacturing at 0.25μm dimensions after a decade of intensive effort at tool and photoresist development. 193nm tool and photoresist development is beginning to demonstrate potential for 0.18-0.15μm capability but much progress is required for the 193 lithography infrastructure to reach a the point at which manufacturing capability can be applied to the 1Gb and later generations of semiconductor technologies. In this paper we will compare and contrast 248 and 193nm photoresist R&D.