DEVELOPMENT OF POSITIVE ELECTRON-BEAM CHEMICAL AMPLIFICATION RESISTS USING TETRAHYDROPYRANYL-PROTECTED POLYVINYLPHENOL

DEVELOPMENT OF POSITIVE ELECTRON-BEAM CHEMICAL AMPLIFICATION RESISTS USING TETRAHYDROPYRANYL-PROTECTED POLYVINYLPHENOL

Chemical amplification positive resists using tetrahydropyranyl-protected polyvinylphenol (THP-M) were investigated for electron-beam lithography. To enhance the resist performance, we used a new novolak resin and trimethylsulfonium triflate (MES) as an acid generator. The novolak resin has a large...

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Veröffentlicht in:Journal of Photopolymer Science and Technology 1995, Vol.8(1), pp.21-28
Hauptverfasser: Katoh, Kohji, Hashimoto, Michiaki, Sakamizu, Toshio, Shiraishi, Hiroshi, Ueno, Takumi
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container_issue 1
container_start_page 21
container_title Journal of Photopolymer Science and Technology
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creator Katoh, Kohji
Hashimoto, Michiaki
Sakamizu, Toshio
Shiraishi, Hiroshi
Ueno, Takumi
description Chemical amplification positive resists using tetrahydropyranyl-protected polyvinylphenol (THP-M) were investigated for electron-beam lithography. To enhance the resist performance, we used a new novolak resin and trimethylsulfonium triflate (MES) as an acid generator. The novolak resin has a large dissolution inhibition effect, and MES shows the dissolution promotion effect. Therefore, the resist composed of these systems showed the high performance. It resolved 0.3μm hole pattern with the aquous base development using an electron-beam lithography system with a dose of 4.7μC/cm2.
doi_str_mv 10.2494/photopolymer.8.21
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