DEVELOPMENT OF POSITIVE ELECTRON-BEAM CHEMICAL AMPLIFICATION RESISTS USING TETRAHYDROPYRANYL-PROTECTED POLYVINYLPHENOL

Chemical amplification positive resists using tetrahydropyranyl-protected polyvinylphenol (THP-M) were investigated for electron-beam lithography. To enhance the resist performance, we used a new novolak resin and trimethylsulfonium triflate (MES) as an acid generator. The novolak resin has a large dissolution inhibition effect, and MES shows the dissolution promotion effect. Therefore, the resist composed of these systems showed the high performance. It resolved 0.3μm hole pattern with the aquous base development using an electron-beam lithography system with a dose of 4.7μC/cm2.