Quantum State in Solid-Phase Crystallization of a-Si:H by FA

Amorphous silicon films prepared by PECVD on glass substrate has been crystallized by conventional furnace annealing (FA) at different temperatures. From the Raman spectra and scanning electronic microscope (SEM), it is found that the thin film grain size present quantum states with annealing temper...

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Veröffentlicht in:	Applied Mechanics and Materials 2011-01, Vol.44-47, p.4154-4156
Hauptverfasser:	Han, Xiang Ju, Lu, Jing Xiao, Chen, Lan Li, Jin, Rui Min, Li, Ding Zhen
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	Amorphous silicon films prepared by PECVD on glass substrate has been crystallized by conventional furnace annealing (FA) at different temperatures. From the Raman spectra and scanning electronic microscope (SEM), it is found that the thin film grain size present quantum states with annealing temperature.
ISSN:	1660-9336 1662-7482 1662-7482
DOI:	10.4028/www.scientific.net/AMM.44-47.4154