Solid-Phase Crystallization of a-Si:H by RTA
Amorphous silicon films prepared by PECVD on glass substrate has been crystallized by rapid thermal annealing (RTA) at the same temperature for different time. From X-ray diffraction (XRD) and scanning electronic microscope (SEM), it is found that the grain size is biggest crystallized at 720°C for...
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| Veröffentlicht in: | Applied Mechanics and Materials 2011-01, Vol.44-47, p.4151-4153 |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | Amorphous silicon films prepared by PECVD on glass substrate has been crystallized by rapid thermal annealing (RTA) at the same temperature for different time. From X-ray diffraction (XRD) and scanning electronic microscope (SEM), it is found that the grain size is biggest crystallized at 720°C for 8 min, an average grain size of 28nm or so is obtained. The thin film is smoothly and perfect structure. |
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| ISSN: | 1660-9336 1662-7482 1662-7482 |
| DOI: | 10.4028/www.scientific.net/AMM.44-47.4151 |