Research on Switching Performance of Static Induction Thyristors

Research on Switching Performance of Static Induction Thyristors

Physical mechanism for switching state of SITHs was discussed, the two-dimensional turn-off model was proposed, expressions of ton and toff were mathematical derived. Measures to reduce the switching time of SITHs, such as reducing the gate width WG and n- region width Wn-, doping Boron atoms with h...

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Veröffentlicht in:Applied Mechanics and Materials 2013-07, Vol.336-338, p.1445-1448
Hauptverfasser: Zhang, Cai Zhen, Chen, Yong Gang, Wang, Yong Shun
Format: Artikel
Sprache:eng
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Zusammenfassung:Physical mechanism for switching state of SITHs was discussed, the two-dimensional turn-off model was proposed, expressions of ton and toff were mathematical derived. Measures to reduce the switching time of SITHs, such as reducing the gate width WG and n- region width Wn-, doping Boron atoms with higher density,etc.,were put forward and verified by experiments.
ISSN:1660-9336
1662-7482
1662-7482
DOI:10.4028/www.scientific.net/AMM.336-338.1445