Design and Simulation of a Novel Horizontal Sensitive Inertial Micro-Switch with Low G Value

A novel horizontal sensitive inertial micro-switch with low g value was proposed and simulated in ANSYS, and was fabricated on quartz substrate based on non-silicon surface micromaching technology. Due to this special design, the micro-switch has a very good horizontal unidirectional sensitivity. The contact effect is improved by a modification of the traditional design. The flexible contact between the proof mass electrode and fixed electrode prolongs the contact time and reduces the rebound effect. The contact time is about 100μs under a half-sine wave shock with a12g peak value.