Growth of CuInGaSe2 Films by RF Sputtering Using CuInGaSe2 Single Phase Target

Growth of CuInGaSe2 Films by RF Sputtering Using CuInGaSe2 Single Phase Target

CuIn0.8Ga0.2Se2 thin film is grown at room temperature by RF sputtering using high quality of CuIn0.8Ga0.2Se2 single phase target. A (112) diffraction peak is dominant with no secondary phases such as selenide materials in the X-ray diffraction pattern. A flat and homogeneous surface can be obtained...

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Veröffentlicht in:Applied Mechanics and Materials 2013-08, Vol.372, p.571-574
Hauptverfasser: Tokuda, Takahiro, Nagaoka, Akira, Miseki, Kenichiro, Mori, Rie, Zhang, Shou Bin, Doutyoku, Shigeo, Yoshino, Kenji
Format: Artikel
Sprache:eng
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Zusammenfassung:CuIn0.8Ga0.2Se2 thin film is grown at room temperature by RF sputtering using high quality of CuIn0.8Ga0.2Se2 single phase target. A (112) diffraction peak is dominant with no secondary phases such as selenide materials in the X-ray diffraction pattern. A flat and homogeneous surface can be obtained in the sample.
ISSN:1660-9336
1662-7482
1662-7482
DOI:10.4028/www.scientific.net/AMM.372.571