Magnetoresistance Effect of Magnetic Tunnel Junction with Co2Ti0.5Mn0.5Al Full-Heusler Alloy Thin Film

We investigated the magnetoresistance effect for a magnetic tunnel junction(MTJ) using a Co2Ti0.5Mn0.5Al electrode on a Cr buffered MgO(001) single crystal substrate. The Co2Ti0.5Mn0.5Al formed an ordered L21 and B2 structures after post-annealing above 873 K and below 773 K, respectively. Maximum m...

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Veröffentlicht in:	Nihon Kinzoku Gakkai shi (1952) 2009-09, Vol.73 (9), p.670
Hauptverfasser:	Sasaki, Akihiro, Tezuka, Nobuki, Sugimoto, Satoshi, Okubo, Akinari, Umetsu, Rie, Kainuma, Ryosuke
Format:	Artikel
Sprache:	eng
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Zusammenfassung:	We investigated the magnetoresistance effect for a magnetic tunnel junction(MTJ) using a Co2Ti0.5Mn0.5Al electrode on a Cr buffered MgO(001) single crystal substrate. The Co2Ti0.5Mn0.5Al formed an ordered L21 and B2 structures after post-annealing above 873 K and below 773 K, respectively. Maximum magnetization and minimum coercivity were exhibited in Co2Ti0.5Mn0.5Al annealed at 673 K. The MTJ using a Co2Ti0.5Mn0.5Al electrode with B2 structure exhibited tunnel magnetoresistance(TMR) ratio of 37% at room temperature and 60% at 5 K. The TMR ratio was larger than that of MTJ using a Co2Ti0.5Mn0.5Al electrode with L21 structure in this study.
ISSN:	0021-4876 1880-6880