Electrical characterization of liquid-phase-deposited SiON on (NH4)2S-treated GaAs

The electrical characteristics of liquid‐phase‐deposited (LPD) silicon oxynitride film on ammonium‐sulfide‐treated p‐type (100) gallium arsenide (GaAs) substrate were investigated. Hydrofluosilicic acid, ammonia, and boric acid aqueous solutions were used as precursors. The electrical characteristics of silicon oxynitride film are a function of the boric acid volume in the growth solution and much improved on GaAs substrate with ammonium‐sulfide treatment. The leakage currents can reach 1.24 × 10−7 and 7.85 × 10−7 A cm−2 at ±0.5 MV cm−1. The lowest interface state density and the dielectric constant are 3.32 × 1011 cm−2 eV−1 and 4.74, respectively.