The Straggling of Dissociation Distance in Molecular Beam Implantation

A specific crystalline defect in diamond may work as a NOT gate in a quantum computer. It is called NV-N center that is composed of two substitutional nitrogen atoms that are separated by c.a. 1.5 nm and one of them is adjacent to a vacancy. In order to find an optimal condition to produce it using a low-energy (100 ∼ 500 eV/atom) N2 beam implantation, we performed an empirical molecular dynamic simulation. By a high-temperatures implantation at 900∼1000 K, the formation probability of such desired NV-N centers was 5 ∼ 10%, which is comparable with a measured data.