High Power and High Reliable 915 nm Lasers with Window Structure Fabricated by Impurity Free Vacancy Disordering (IFVD)

High Power and High Reliable 915 nm Lasers with Window Structure Fabricated by Impurity Free Vacancy Disordering (IFVD)

We have demonstrated high performance broad area single emitter lasers with window structure fabricated by newly developed impurity free vacancy disordering (IFVD) technique. Vacancies induce quantum well intermixing, leading to bandgap shift. We have succeeded in obtaining the large bandgap shift i...

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Veröffentlicht in:Denki Gakkai ronbunshi. C, Erekutoronikusu, joho kogaku, shisutemu Erekutoronikusu, joho kogaku, shisutemu, 2008, Vol.128 (5), p.713-716
Hauptverfasser: Taniguchi, Hidehiro, Ishii, Hirotatsu, Minato, Ryuichiro, Ohki, Yutaka, Namegaya, Takeshi, Kasukawa, Akihiko
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container_title Denki Gakkai ronbunshi. C, Erekutoronikusu, joho kogaku, shisutemu
container_volume 128
creator Taniguchi, Hidehiro
Ishii, Hirotatsu
Minato, Ryuichiro
Ohki, Yutaka
Namegaya, Takeshi
Kasukawa, Akihiko
description We have demonstrated high performance broad area single emitter lasers with window structure fabricated by newly developed impurity free vacancy disordering (IFVD) technique. Vacancies induce quantum well intermixing, leading to bandgap shift. We have succeeded in obtaining the large bandgap shift in window region and maintaining the original bandgap in gain region simultaneously. We can control the bandgap difference. A very high output power of 25.6W at 30A under pulsed operation was obtained without facet degradation. This is the one of the highest power for 100μm wide single emitter lasers. Moreover, no degradation and no sudden failure were observed for 5800 hours life test at 8W-20°C. We have, thus, realized the highest output power and high reliable lasers with window structure fabricated by IFVD.
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_1433895381</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3076388821</sourcerecordid><originalsourceid>FETCH-LOGICAL-c1813-2a0382c3a152b0652d632fb9b411cecda8cbdd462372c79f358c98812ffa98823</originalsourceid><addsrcrecordid>eNo1kE1Lw0AYhBdRsFbvHhe86CE17360m6O0xhYKih_1uGw2b9otbVJ3E0L-vdHqaRgYZoaHkGuIRyAF3DvELboQRsDUaAL8hAyACxUpkPKUDGKuZCQYg3NyEcI2jjmXQgxIO3frDX2pWvTUlDn9ta-4cybbIU1A0nJPlyagD7R19YZ-ujKvWvpW-8bWjUeamsw7a2rMadbRxf7QeFd3NPWIdGWsKW1HZy5UPkfvyjW9XaSr2d0lOSvMLuDVnw7JR_r4Pp1Hy-enxfRhGVlQwCNm-uPMcgOSZfFYsnzMWZElmQCwaHOjbJbnYsz4hNlJUnCpbKIUsKIwvTI-JDfH3oOvvhoMtd5WjS_7SQ2Cc5VI3u8MSXxMWV-F4LHQB-_2xncaYv2DV__j1T1e3ePl31fWbos</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1433895381</pqid></control><display><type>article</type><title>High Power and High Reliable 915 nm Lasers with Window Structure Fabricated by Impurity Free Vacancy Disordering (IFVD)</title><source>EZB-FREE-00999 freely available EZB journals</source><creator>Taniguchi, Hidehiro ; Ishii, Hirotatsu ; Minato, Ryuichiro ; Ohki, Yutaka ; Namegaya, Takeshi ; Kasukawa, Akihiko</creator><creatorcontrib>Taniguchi, Hidehiro ; Ishii, Hirotatsu ; Minato, Ryuichiro ; Ohki, Yutaka ; Namegaya, Takeshi ; Kasukawa, Akihiko</creatorcontrib><description>We have demonstrated high performance broad area single emitter lasers with window structure fabricated by newly developed impurity free vacancy disordering (IFVD) technique. Vacancies induce quantum well intermixing, leading to bandgap shift. We have succeeded in obtaining the large bandgap shift in window region and maintaining the original bandgap in gain region simultaneously. We can control the bandgap difference. A very high output power of 25.6W at 30A under pulsed operation was obtained without facet degradation. This is the one of the highest power for 100μm wide single emitter lasers. Moreover, no degradation and no sudden failure were observed for 5800 hours life test at 8W-20°C. We have, thus, realized the highest output power and high reliable lasers with window structure fabricated by IFVD.</description><identifier>ISSN: 0385-4221</identifier><identifier>EISSN: 1348-8155</identifier><identifier>DOI: 10.1541/ieejeiss.128.713</identifier><language>eng</language><publisher>Tokyo: Japan Science and Technology Agency</publisher><ispartof>Denki Gakkai ronbunshi. C, Erekutoronikusu, joho kogaku, shisutemu, 2008, Vol.128 (5), p.713-716</ispartof><rights>Copyright Japan Science and Technology Agency 2008</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c1813-2a0382c3a152b0652d632fb9b411cecda8cbdd462372c79f358c98812ffa98823</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,4009,27902,27903,27904</link.rule.ids></links><search><creatorcontrib>Taniguchi, Hidehiro</creatorcontrib><creatorcontrib>Ishii, Hirotatsu</creatorcontrib><creatorcontrib>Minato, Ryuichiro</creatorcontrib><creatorcontrib>Ohki, Yutaka</creatorcontrib><creatorcontrib>Namegaya, Takeshi</creatorcontrib><creatorcontrib>Kasukawa, Akihiko</creatorcontrib><title>High Power and High Reliable 915 nm Lasers with Window Structure Fabricated by Impurity Free Vacancy Disordering (IFVD)</title><title>Denki Gakkai ronbunshi. C, Erekutoronikusu, joho kogaku, shisutemu</title><description>We have demonstrated high performance broad area single emitter lasers with window structure fabricated by newly developed impurity free vacancy disordering (IFVD) technique. Vacancies induce quantum well intermixing, leading to bandgap shift. We have succeeded in obtaining the large bandgap shift in window region and maintaining the original bandgap in gain region simultaneously. We can control the bandgap difference. A very high output power of 25.6W at 30A under pulsed operation was obtained without facet degradation. This is the one of the highest power for 100μm wide single emitter lasers. Moreover, no degradation and no sudden failure were observed for 5800 hours life test at 8W-20°C. We have, thus, realized the highest output power and high reliable lasers with window structure fabricated by IFVD.</description><issn>0385-4221</issn><issn>1348-8155</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNo1kE1Lw0AYhBdRsFbvHhe86CE17360m6O0xhYKih_1uGw2b9otbVJ3E0L-vdHqaRgYZoaHkGuIRyAF3DvELboQRsDUaAL8hAyACxUpkPKUDGKuZCQYg3NyEcI2jjmXQgxIO3frDX2pWvTUlDn9ta-4cybbIU1A0nJPlyagD7R19YZ-ujKvWvpW-8bWjUeamsw7a2rMadbRxf7QeFd3NPWIdGWsKW1HZy5UPkfvyjW9XaSr2d0lOSvMLuDVnw7JR_r4Pp1Hy-enxfRhGVlQwCNm-uPMcgOSZfFYsnzMWZElmQCwaHOjbJbnYsz4hNlJUnCpbKIUsKIwvTI-JDfH3oOvvhoMtd5WjS_7SQ2Cc5VI3u8MSXxMWV-F4LHQB-_2xncaYv2DV__j1T1e3ePl31fWbos</recordid><startdate>2008</startdate><enddate>2008</enddate><creator>Taniguchi, Hidehiro</creator><creator>Ishii, Hirotatsu</creator><creator>Minato, Ryuichiro</creator><creator>Ohki, Yutaka</creator><creator>Namegaya, Takeshi</creator><creator>Kasukawa, Akihiko</creator><general>Japan Science and Technology Agency</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SC</scope><scope>7SP</scope><scope>8FD</scope><scope>JQ2</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope></search><sort><creationdate>2008</creationdate><title>High Power and High Reliable 915 nm Lasers with Window Structure Fabricated by Impurity Free Vacancy Disordering (IFVD)</title><author>Taniguchi, Hidehiro ; Ishii, Hirotatsu ; Minato, Ryuichiro ; Ohki, Yutaka ; Namegaya, Takeshi ; Kasukawa, Akihiko</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1813-2a0382c3a152b0652d632fb9b411cecda8cbdd462372c79f358c98812ffa98823</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Taniguchi, Hidehiro</creatorcontrib><creatorcontrib>Ishii, Hirotatsu</creatorcontrib><creatorcontrib>Minato, Ryuichiro</creatorcontrib><creatorcontrib>Ohki, Yutaka</creatorcontrib><creatorcontrib>Namegaya, Takeshi</creatorcontrib><creatorcontrib>Kasukawa, Akihiko</creatorcontrib><collection>CrossRef</collection><collection>Computer and Information Systems Abstracts</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts – Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><jtitle>Denki Gakkai ronbunshi. C, Erekutoronikusu, joho kogaku, shisutemu</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Taniguchi, Hidehiro</au><au>Ishii, Hirotatsu</au><au>Minato, Ryuichiro</au><au>Ohki, Yutaka</au><au>Namegaya, Takeshi</au><au>Kasukawa, Akihiko</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High Power and High Reliable 915 nm Lasers with Window Structure Fabricated by Impurity Free Vacancy Disordering (IFVD)</atitle><jtitle>Denki Gakkai ronbunshi. C, Erekutoronikusu, joho kogaku, shisutemu</jtitle><date>2008</date><risdate>2008</risdate><volume>128</volume><issue>5</issue><spage>713</spage><epage>716</epage><pages>713-716</pages><issn>0385-4221</issn><eissn>1348-8155</eissn><abstract>We have demonstrated high performance broad area single emitter lasers with window structure fabricated by newly developed impurity free vacancy disordering (IFVD) technique. Vacancies induce quantum well intermixing, leading to bandgap shift. We have succeeded in obtaining the large bandgap shift in window region and maintaining the original bandgap in gain region simultaneously. We can control the bandgap difference. A very high output power of 25.6W at 30A under pulsed operation was obtained without facet degradation. This is the one of the highest power for 100μm wide single emitter lasers. Moreover, no degradation and no sudden failure were observed for 5800 hours life test at 8W-20°C. We have, thus, realized the highest output power and high reliable lasers with window structure fabricated by IFVD.</abstract><cop>Tokyo</cop><pub>Japan Science and Technology Agency</pub><doi>10.1541/ieejeiss.128.713</doi><tpages>4</tpages><oa>free_for_read</oa></addata></record>
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title High Power and High Reliable 915 nm Lasers with Window Structure Fabricated by Impurity Free Vacancy Disordering (IFVD)
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-22T22%3A06%3A29IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High%20Power%20and%20High%20Reliable%20915%20nm%20Lasers%20with%20Window%20Structure%20Fabricated%20by%20Impurity%20Free%20Vacancy%20Disordering%20(IFVD)&rft.jtitle=Denki%20Gakkai%20ronbunshi.%20C,%20Erekutoronikusu,%20joho%20kogaku,%20shisutemu&rft.au=Taniguchi,%20Hidehiro&rft.date=2008&rft.volume=128&rft.issue=5&rft.spage=713&rft.epage=716&rft.pages=713-716&rft.issn=0385-4221&rft.eissn=1348-8155&rft_id=info:doi/10.1541/ieejeiss.128.713&rft_dat=%3Cproquest_cross%3E3076388821%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1433895381&rft_id=info:pmid/&rfr_iscdi=true