High Power and High Reliable 915 nm Lasers with Window Structure Fabricated by Impurity Free Vacancy Disordering (IFVD)

We have demonstrated high performance broad area single emitter lasers with window structure fabricated by newly developed impurity free vacancy disordering (IFVD) technique. Vacancies induce quantum well intermixing, leading to bandgap shift. We have succeeded in obtaining the large bandgap shift in window region and maintaining the original bandgap in gain region simultaneously. We can control the bandgap difference. A very high output power of 25.6W at 30A under pulsed operation was obtained without facet degradation. This is the one of the highest power for 100μm wide single emitter lasers. Moreover, no degradation and no sudden failure were observed for 5800 hours life test at 8W-20°C. We have, thus, realized the highest output power and high reliable lasers with window structure fabricated by IFVD.